The 2SC4081T106R from ROHM manufacturer is a Transistors (BJT) - Single with TRANSISTOR,NPN,50V,0.15A,SOT-323.
The 2SC4081T106R is Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 200mW Surface Mount UMT3 Bipolar Transistors - BJT NPN 50V 0.15A SOT-323. More details for 2SC4081T106R can be seen below.
Details
Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 200mW Surface Mount UMT3
Bipolar Transistors - BJT NPN 50V 0.15A SOT-323
- Categories
- Transistors
- Manufacturer
- ROHM Semiconductor
- Veswin Part Number
- V1070-2SC4081T106R
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On Jun 15 - Jun 20 (Choose Expedited Shipping)
- EDA / CAD Models
- 2SC4081T106R by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Voltage Collector Emitter Breakdown Max
- 50V
- Vce Saturation Max Ib Ic
- 400mV @ 5mA, 50mA
- Unit Weight
- 0.000988 oz
- Transistor Type
- NPN
- Transistor Polarity
- NPN
- Supplier Device Package
- UMT3
- Series
- 2SC4081
- Power Max
- 200mW
- Pd Power Dissipation
- 0.2 W
- Packaging
- Digi-ReelR Alternate Packaging
- Package Case
- SC-70, SOT-323
- Mounting Style
- SMD/SMT
- Mounting Type
- Surface Mount
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Maximum DC Collector Current
- 0.15 A
- Gain Bandwidth Product fT
- 180 MHz
- Frequency Transition
- 180MHz
- Emitter Base Voltage VEBO
- 7 V
- DC Current Gain hFE Min Ic Vce
- 180 @ 1mA, 6V
- DC Current Gain hFE Max
- 560
- DC Collector Base Gain hfe Min
- 120
- Current Collector Ic Max
- 150mA
- Current Collector Cutoff Max
- 100nA (ICBO)
- Continuous Collector Current
- 0.15 A
- Configuration
- Single
- Collector Emitter Voltage VCEO Max
- 50 V
- Collector Base Voltage VCBO
- 60 V
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datasheet in pdf, manual, schematic, equivalent, cross reference.
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