The NDS9952A from FAIRCHILD manufacturer is a FETs - Arrays with Dual N & P-Channel Enhancement Mode Field Effect Transistor (dual N-channel and P-channel enhancement type field effect transistor (N-channel: Leakage current 3.7A, drain-source voltage of 30V, Resistance 0.08Ω; P-channel: Leakage current-2.9A, drain-source voltage-30V, Resistance 0.13Ω)) ,MOSFET SO-8 N&P-CH ENHANCE.
The NDS9952A is Mosfet Array N and P-Channel 30V 3.7A, 2.9A 900mW Surface Mount 8-SO Trans MOSFET N/P-CH 30V 3.7A/2.9A 8-Pin SOIC T/R MOSFET SO-8 N&P-CH ENHANCE. More details for NDS9952A can be seen below.
Details
Mosfet Array N and P-Channel 30V 3.7A, 2.9A 900mW Surface Mount 8-SO
Trans MOSFET N/P-CH 30V 3.7A/2.9A 8-Pin SOIC T/R
MOSFET SO-8 N&P-CH ENHANCE
- Categories
- MOS Drive
- Manufacturer
- Fairchild Semiconductor
- Veswin Part Number
- V7583-NDS9952A
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On Jun 15 - Jun 20 (Choose Expedited Shipping)
- EDA / CAD Models
- NDS9952A by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 2.8V @ 250μA
- Vgs Gate Source Voltage
- 20 V
- Vds Drain Source Breakdown Voltage
- 30 V
- Unit Weight
- 0.006596 oz
- Typical Turn On Delay Time
- 10 ns 9 ns
- Typical Turn Off Delay Time
- 21 ns 21 ns
- Transistor Type
- 1 N-Channel 1 P-Channel
- Transistor Polarity
- N-Channel P-Channel
- Technology
- Si
- Supplier Device Package
- 8-SO
- Rise Time
- 13 ns 21 ns
- Rds On Max Id Vgs
- 80 mOhm @ 1A, 10V
- Rds On Drain Source Resistance
- 80 mOhms
- Power Max
- 900mW
- Pd Power Dissipation
- 2 W
- Part Aliases
- NDS9952A_NL
- Packaging
- Digi-ReelR Alternate Packaging
- Package Case
- 8-SOIC (0.154", 3.90mm Width)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Number of Channels
- 2 Channel
- Mounting Style
- SMD/SMT
- Mounting Type
- Surface Mount
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Input Capacitance Ciss Vds
- 320pF @ 10V
- Id Continuous Drain Current
- 3.7 A
- Gate Charge Qg Vgs
- 25nC @ 10V
- Forward Transconductance Min
- 6 S 4 S
- FET Type
- N and P-Channel
- FET Feature
- Logic Level Gate
- Fall Time
- 5 ns 8 ns
- Drain to Source Voltage Vdss
- 30V
- Current Continuous Drain Id 25°C
- 3.7A, 2.9A
- Configuration
- Dual Dual Drain
- Channel Mode
- Enhancement
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- A: We Provide 90 days warranty for our product.
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A: Yes, Our product technical engineer will help you with the NDS9952A pinout information, application notes, replacement,
datasheet in pdf, manual, schematic, equivalent, cross reference.
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