NTJD4152PT1G ON SOT363 Transistors

ON

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  • Part Number
  • NTJD4152PT1G
  • Brand
  • ON
  • Product Categories
  • FETs - Arrays
  • Package
  • SOT363
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The NTJD4152PT1G from ON manufacturer is a FETs - Arrays with Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000,MOSFET 20V 0.88mA P-Channel ESD Protection. The NTJD4152PT1G is Mosfet Array 2 P-Channel (Dual) 20V 880mA 272mW Surface Mount SC-88/SC70-6/SOT-363 Trans MOSFET P-CH 20V 0.88A 6-Pin SOT-363 T/R MOSFET 20V 0.88mA P-Channel ESD Protection. More details for NTJD4152PT1G can be seen below.

Details

Mosfet Array 2 P-Channel (Dual) 20V 880mA 272mW Surface Mount SC-88/SC70-6/SOT-363
Trans MOSFET P-CH 20V 0.88A 6-Pin SOT-363 T/R
MOSFET 20V 0.88mA P-Channel ESD Protection
Categories
Transistors
Manufacturer
ON Semiconductor
Veswin Part Number
V1070-NTJD4152PT1G
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On Jun 15 - Jun 20 (Choose Expedited Shipping)
EDA / CAD Models
NTJD4152PT1G by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
450mV @ 250μA
Vgs Gate Source Voltage
12 V
Vds Drain Source Breakdown Voltage
- 20 V
Unit Weight
0.000265 oz
Typical Turn On Delay Time
5.8 ns
Typical Turn Off Delay Time
13.5 ns
Transistor Type
2 P-Channel
Transistor Polarity
P-Channel
Technology
Si
Supplier Device Package
SC-88/SC70-6/SOT-363
Series
NTJD4152P
Rise Time
6.5 ns
Rds On Max Id Vgs
260 mOhm @ 880mA, 4.5V
Rds On Drain Source Resistance
600 mOhms
Power Max
272mW
Pd Power Dissipation
272 mW
Packaging
Digi-ReelR Alternate Packaging
Package Case
6-TSSOP, SC-88, SOT-363
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
2 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
155pF @ 20V
Id Continuous Drain Current
- 880 mA
Gate Charge Qg Vgs
2.2nC @ 4.5V
Forward Transconductance Min
3 S
FET Type
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Fall Time
6.5 ns
Drain to Source Voltage Vdss
20V
Current Continuous Drain Id 25°C
880mA
Configuration
Dual
Channel Mode
Enhancement

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  • Q: NTJD4152PT1G Warranty?
  • A: We Provide 90 days warranty for our product.
  • Q: NTJD4152PT1G Technical Support?
  • A: Yes, Our product technical engineer will help you with the NTJD4152PT1G pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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