The SI4435DYTRPBF from INFINEON manufacturer is a IC Chips with -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to SI4435DYTR with Lead Free Packaging on Tape and Reel.
The SI4435DYTRPBF is P-Channel 30V 8A (Tc) 2.5W (Ta) Surface Mount 8-SO Trans MOSFET P-CH Si 30V 8A 8-Pin SOIC T/R MOSFET HEXFET P-CH Low 0.020 Ohm -30V. More details for SI4435DYTRPBF can be seen below.
Details
P-Channel 30V 8A (Tc) 2.5W (Ta) Surface Mount 8-SO
Trans MOSFET P-CH Si 30V 8A 8-Pin SOIC T/R
MOSFET HEXFET P-CH Low 0.020 Ohm -30V
- Categories
- MOS Field Effect Transistors
- Manufacturer
- Infineon Technologies AG
- Veswin Part Number
- V107110-SI4435DYTRPBF-Infineon
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On Jun 15 - Jun 20 (Choose Expedited Shipping)
- EDA / CAD Models
- SI4435DYTRPBF by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 3V @ 250μA
- Vgs Gate Source Voltage
- 20 V
- Vds Drain Source Breakdown Voltage
- - 30 V
- Unit Weight
- 0.006596 oz
- Typical Turn On Delay Time
- 13 ns
- Typical Turn Off Delay Time
- 42 ns
- Transistor Type
- 1 P-Channel
- Transistor Polarity
- P-Channel
- Technology
- Si
- Supplier Device Package
- 8-SO
- Series
- PowerTrenchR
- Rise Time
- 13.5 ns
- Rds On Max Id Vgs
- 20 mOhm @ 8.8A, 10V
- Rds On Drain Source Resistance
- 20 mOhms
- Power Max
- 1W
- Pd Power Dissipation
- 2.5 W
- Part Aliases
- SI4435DY_NL
- Packaging
- Digi-ReelR Alternate Packaging
- Package Case
- 8-SOIC (0.154", 3.90mm Width)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Number of Channels
- 1 Channel
- Mounting Style
- SMD/SMT
- Mounting Type
- Surface Mount
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Input Capacitance Ciss Vds
- 1604pF @ 15V
- Id Continuous Drain Current
- - 8.8 A
- Gate Charge Qg Vgs
- 24nC @ 5V
- Forward Transconductance Min
- 24 S
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Standard
- Fall Time
- 25 ns
- Drain to Source Voltage Vdss
- 30V
- Current Continuous Drain Id 25°C
- 8.8A (Ta)
- Configuration
- Single Quad Drain Triple Source
- Channel Mode
- Enhancement
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- A: We Provide 90 days warranty for our product.
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A: Yes, Our product technical engineer will help you with the SI4435DYTRPBF pinout information, application notes, replacement,
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