The SI7439DP-T1-GE3 from VISHAY manufacturer is a FETs - Single with P CHANNEL MOSFET, -150V, 3A, Continuous Drain Current Id:-5.2A, Drain Source Voltage Vds:-150V, On Resistance Rds(on):95mohm, Operating Temperature Range:-55°C to +150°C, .
The SI7439DP-T1-GE3 is P-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK? SO-8 Trans MOSFET P-CH 150V 3A 8-Pin PowerPAK SO T/R MOSFET 150V 5.2A 5.4W 90mohm @ 10V. More details for SI7439DP-T1-GE3 can be seen below.
Details
P-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK? SO-8
Trans MOSFET P-CH 150V 3A 8-Pin PowerPAK SO T/R
MOSFET 150V 5.2A 5.4W 90mohm @ 10V
- Categories
- Transistors
- Manufacturer
- Vishay Siliconix
- Veswin Part Number
- V1070-SI7439DP-T1-GE3
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On Jun 15 - Jun 20 (Choose Expedited Shipping)
- EDA / CAD Models
- SI7439DP-T1-GE3 by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 4V @ 250μA
- Vgs Gate Source Voltage
- 20 V
- Vds Drain Source Breakdown Voltage
- - 150 V
- Unit Weight
- 0.017870 oz
- Typical Turn On Delay Time
- 25 ns
- Typical Turn Off Delay Time
- 115 ns
- Transistor Type
- 1 P-Channel
- Transistor Polarity
- P-Channel
- Technology
- Si
- Supplier Device Package
- PowerPAKR SO-8
- Series
- TrenchFETR
- Rise Time
- 46 ns
- Rds On Max Id Vgs
- 90 mOhm @ 5.2A, 10V
- Rds On Drain Source Resistance
- 90 mOhms
- Power Max
- 1.9W
- Pd Power Dissipation
- 1.9 W
- Part Aliases
- SI7439DP-GE3
- Packaging
- Digi-ReelR Alternate Packaging
- Package Case
- PowerPAKR SO-8
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Number of Channels
- 1 Channel
- Mounting Style
- SMD/SMT
- Mounting Type
- Surface Mount
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Input Capacitance Ciss Vds
- -
- Id Continuous Drain Current
- 3 A
- Gate Charge Qg Vgs
- 135nC @ 10V
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Standard
- Fall Time
- 46 ns
- Drain to Source Voltage Vdss
- 150V
- Current Continuous Drain Id 25°C
- 3A (Ta)
- Configuration
- Single
- Channel Mode
- Enhancement
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