APT65GP60L2DQ2G MICROSEMI TO264 Transistors

MICROSEMI
  • APT65GP60L2DQ2G

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  • Part Number
  • APT65GP60L2DQ2G
  • Product Categories
  • IGBTs - Single
  • Package
  • TO264
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The APT65GP60L2DQ2G from MICROSEMI manufacturer is a IGBTs - Single with Trans IGBT Chip N-CH 600V 198A 3-Pin(3+Tab) TO-264 MAX. The APT65GP60L2DQ2G is IGBT PT 600V 198A 833W Through Hole Trans IGBT Chip N-CH 600V 198A 833000mW 3-Pin(3+Tab) TO-264 MAX IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi. More details for APT65GP60L2DQ2G can be seen below.

Details

IGBT PT 600V 198A 833W Through Hole
Trans IGBT Chip N-CH 600V 198A 833000mW 3-Pin(3+Tab) TO-264 MAX
IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
Categories
Transistors
Manufacturer
Microsemi
Veswin Part Number
V1070-APT65GP60L2DQ2G
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On Jun 07 - Jun 12 (Choose Expedited Shipping)
EDA / CAD Models
APT65GP60L2DQ2G by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Voltage Collector Emitter Breakdown Max
600V
Vce on Max Vge Ic
2.7V @ 15V, 65A
Unit Weight
1.340411 oz
Test Condition
400V, 65A, 5 Ohm, 15V
Td on off 25°C
30ns/90ns
Switching Energy
605μJ (on), 895μJ (off)
Supplier Device Package
*
Series
POWER MOS 7R
Reverse Recovery Time trr
-
Power Max
833W
Packaging
Tube
Package Case
TO-264-3, TO-264AA
Mounting Style
Through Hole
Mounting Type
Through Hole
Input Type
Standard
IGBT Type
PT
Gate Charge
210nC
Current Collector Pulsed Icm
250A
Current Collector Ic Max
198A

MICROSEMI Inventory

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  • A: We Provide 90 days warranty for our product.
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  • A: Yes, Our product technical engineer will help you with the APT65GP60L2DQ2G pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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