The NGTB50N120FL2WG from Onsemi manufacturer is a Electronic part with FS2 IGBT with 1200V and 50A specifications for Solar/UPS systems.
More details for NGTB50N120FL2WG can be seen below.
Details
The NGTB50N120FL2WG is an Insulated Gate Bipolar Transistor (IGBT) that stands out with its robust Field Stop II Trench construction, making it a cost-effective and reliable choice for demanding switching applications. With superior performance and a low on-state voltage, this IGBT minimizes switching loss, making it ideal for UPS and solar applications. Additionally, the device features a co-packaged free wheeling diode with a low forward voltage, ensuring both soft and fast operation
Feature
The NGTB50N120FL2WG is a 1200V IGBT (Insulated Gate Bipolar Transistor) with a current rating of 50AIt features low conduction and switching losses, making it suitable for high-frequency applicationsWith its fast switching speed and high power efficiency, it's commonly used in power electronics, motor drives, and renewable energy systems
Application
The NGTB50N120FL2WG is commonly used in power electronic applications such as motor drives, inverters, and switching power suppliesIts features, including high voltage and current ratings, make it suitable for high-power applications requiring efficient and reliable switchingAdditionally, its low on-state resistance minimizes power losses, making it ideal for energy-efficient designs
- Manufacturer
- Onsemi
- Veswin Part Number
- V00-NGTB50N120FL2WG
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On Jul 03 - Jul 08 (Choose Expedited Shipping)
- EDA / CAD Models
- NGTB50N120FL2WG by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- VF Typ (V)
- 2
- VCE(sat) Typ (V)
- 2.2
- V(BR)CES Typ (V)
- 1200
- Trr Typ (ns)
- 256
- Status
- Last Shipments
- Short Circuit Withstand (µs)
- 10
- Pricing ($/Unit)
- Price N/A
- PD Max (W)
- 535
- Package Type
- TO-247
- ON Target
- N
- MSL Type
- NA
- MSL Temp (°C)
- 0
- Irr Typ (A)
- 19
- IC Max (A)
- 50
- Gate Charge Typ (nC)
- 311
- Eon Typ (mJ)
- 4.4
- Eoff Typ (mJ)
- 1.4
- Co Packaged Diode
- Yes
- Container Type
- TUBE
- Container Qty.
- 30
- Compliance
- PbAHP
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