The NTJD4401NT1G from ON manufacturer is a FETs - Arrays with DUAL N CHANNEL MOSFET, 20V, Transistor Polarity:Dual N Channel, Continuous Drain Current Id:630mA, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.29ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:920mV.
The NTJD4401NT1G is Mosfet Array 2 N-Channel (Dual) 20V 630mA 270mW Surface Mount SC-88/SC70-6/SOT-363 Trans MOSFET N-CH 20V 0.91A 6-Pin SOT-363 T/R MOSFET 20V Dual N-Channel ESD Protection. More details for NTJD4401NT1G can be seen below.
Details
Mosfet Array 2 N-Channel (Dual) 20V 630mA 270mW Surface Mount SC-88/SC70-6/SOT-363
Trans MOSFET N-CH 20V 0.91A 6-Pin SOT-363 T/R
MOSFET 20V Dual N-Channel ESD Protection
- Categories
- Transistors
- Manufacturer
- ON Semiconductor
- Veswin Part Number
- V1070-NTJD4401NT1G
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On Jun 07 - Jun 12 (Choose Expedited Shipping)
- EDA / CAD Models
- NTJD4401NT1G by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 1.5V @ 250μA
- Vgs Gate Source Voltage
- 12 V
- Vds Drain Source Breakdown Voltage
- 20 V
- Typical Turn On Delay Time
- 83 ns
- Typical Turn Off Delay Time
- 786 ns
- Transistor Type
- 2 N-Channel
- Transistor Polarity
- N-Channel
- Technology
- Si
- Supplier Device Package
- SC-88/SC70-6/SOT-363
- Series
- NTJD4401N
- Rise Time
- 227 ns
- Rds On Max Id Vgs
- 375 mOhm @ 630mA, 4.5V
- Rds On Drain Source Resistance
- 510 mOhms
- Power Max
- 270mW
- Pd Power Dissipation
- 270 mW
- Packaging
- Digi-ReelR Alternate Packaging
- Package Case
- 6-TSSOP, SC-88, SOT-363
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Number of Channels
- 2 Channel
- Mounting Style
- SMD/SMT
- Mounting Type
- Surface Mount
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Input Capacitance Ciss Vds
- 46pF @ 20V
- Id Continuous Drain Current
- 775 mA
- Gate Charge Qg Vgs
- 3nC @ 4.5V
- Forward Transconductance Min
- 2 S
- FET Type
- 2 N-Channel (Dual)
- FET Feature
- Logic Level Gate
- Fall Time
- 227 ns
- Drain to Source Voltage Vdss
- 20V
- Current Continuous Drain Id 25°C
- 630mA
- Configuration
- Dual
- Channel Mode
- Enhancement
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