SI2309CDS-T1-E3 VISHAY/SILICONIX TO-236-3 Transistors

SI2309CDS-T1-E3
  • SI2309CDS-T1-E3

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  • Part Number
  • SI2309CDS-T1-E3
  • Brand
  • VISHAY SILICONIX
  • Product Categories
  • FETs - Single
  • Package
  • TO-236-3
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The SI2309CDS-T1-E3 from VISHAY/SILICONIX manufacturer is a FETs - Single with MOSFET 60V 1.6A 1.7W 345mohm @ 10V. The SI2309CDS-T1-E3 is Trans MOSFET P-CH 60V 1.2A Automotive 3-Pin SOT-23 T/R MOSFET 60V 1.6A 1.7W 345mohm @ 10V. More details for SI2309CDS-T1-E3 can be seen below.

Details

Trans MOSFET P-CH 60V 1.2A Automotive 3-Pin SOT-23 T/R
MOSFET 60V 1.6A 1.7W 345mohm @ 10V
Categories
Transistors
Manufacturer
VISHAY/SILICONIX
Veswin Part Number
V1070-SI2309CDS-T1-E3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On Jun 15 - Jun 20 (Choose Expedited Shipping)
EDA / CAD Models
SI2309CDS-T1-E3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
- 60 V
Unit Weight
0.050717 oz
Typical Turn On Delay Time
40 ns
Typical Turn Off Delay Time
15 ns
Transistor Type
1 P-Channel
Transistor Polarity
P-Channel
Technology
Si
Rise Time
35 ns
Rds On Drain Source Resistance
345 mOhms
Pd Power Dissipation
1 W
Part Aliases
SI2309CDS-E3
Packaging
Reel
Package Case
SOT-23-3
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Id Continuous Drain Current
1.2 A
Fall Time
35 ns
Configuration
Single
Channel Mode
Enhancement

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