SI7115DN-T1-E3 VISHAY/SILICONIX QFN8 Other Components

SI7115DN-T1-E3
  • SI7115DN-T1-E3

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  • Part Number
  • SI7115DN-T1-E3
  • Brand
  • VISHAY SILICONIX
  • Product Categories
  • FETs - Single
  • Package
  • QFN8
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The SI7115DN-T1-E3 from VISHAY/SILICONIX manufacturer is a FETs - Single with MOSFET P-CH 150V 8.9A 1212-8. The SI7115DN-T1-E3 is P-Channel 150V 8.9A (Tc) 52W (Tc) Surface Mount PowerPAK? 1212-8 Trans MOSFET P-CH 150V 2.3A 8-Pin PowerPAK 1212 T/R MOSFET 150V 8.9A 52W. More details for SI7115DN-T1-E3 can be seen below.

Details

P-Channel 150V 8.9A (Tc) 52W (Tc) Surface Mount PowerPAK? 1212-8
Trans MOSFET P-CH 150V 2.3A 8-Pin PowerPAK 1212 T/R
MOSFET 150V 8.9A 52W
Categories
Other Components
Manufacturer
VISHAY/SILICONIX
Veswin Part Number
V2320-SI7115DN-T1-E3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 24 - May 29 (Choose Expedited Shipping)
EDA / CAD Models
SI7115DN-T1-E3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
- 150 V
Typical Turn On Delay Time
20 ns 11 ns
Typical Turn Off Delay Time
38 ns 52 ns
Transistor Type
1 P-Channel
Transistor Polarity
P-Channel
Technology
Si
Series
SI71xxDx
Rise Time
95 ns 28 ns
Rds On Drain Source Resistance
295 mOhms
Pd Power Dissipation
3.7 W
Part Aliases
SI7115DN-E3
Packaging
Reel
Package Case
PowerPAK-1212-8
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 50 C
Maximum Operating Temperature
+ 150 C
Id Continuous Drain Current
2.3 A
Fall Time
34 ns 35 ns
Configuration
Single
Channel Mode
Enhancement

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