SIS443DN-T1-GE3 VISHAY PowerPAK® 1212-8 MOS Field Effect Transistors

VISHAY
  • SIS443DN-T1-GE3

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  • Part Number
  • SIS443DN-T1-GE3
  • Product Categories
  • MOS Field Effect Transistors
  • Package
  • PowerPAK® 1212-8
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The SIS443DN-T1-GE3 from VISHAY manufacturer is a MOS Field Effect Transistors with MOSFET P-CH 40V 35A PPAK 1212-8. The SIS443DN-T1-GE3 is P-Channel 40V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8 Trans MOSFET P-CH 40V 13.3A 8-Pin PowerPAK 1212 T/R MOSFET -40V .0117Ohm@10V 35A P-Ch G-III. More details for SIS443DN-T1-GE3 can be seen below.

Details

P-Channel 40V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK? 1212-8
Trans MOSFET P-CH 40V 13.3A 8-Pin PowerPAK 1212 T/R
MOSFET -40V .0117Ohm@10V 35A P-Ch G-III
Categories
MOS Field Effect Transistors
Manufacturer
Vishay Siliconix
Veswin Part Number
V107110-SIS443DN_T1_GE3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 24 - May 29 (Choose Expedited Shipping)
EDA / CAD Models
SIS443DN-T1-GE3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
2.3V @ 250μA
Vgs th Gate Source Threshold Voltage
- 1 V to - 2.3 V
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
- 40 V
Typical Turn On Delay Time
12 ns
Typical Turn Off Delay Time
48 ns
Transistor Type
1 P-Channel
Transistor Polarity
P-Channel
Technology
Si
Supplier Device Package
PowerPAKR 1212-8
Series
TrenchFETR
Rise Time
10 ns
Rds On Max Id Vgs
11.7 mOhm @ 15A, 10V
Rds On Drain Source Resistance
16 mOhms
Qg Gate Charge
41.5 nC
Power Max
52W
Pd Power Dissipation
52 W
Packaging
Digi-ReelR Alternate Packaging
Package Case
PowerPAKR 1212-8
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
4370pF @ 20V
Id Continuous Drain Current
- 35 A
Gate Charge Qg Vgs
135nC @ 10V
Forward Transconductance Min
50 S
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Standard
Fall Time
10 ns
Drain to Source Voltage Vdss
40V
Current Continuous Drain Id 25°C
35A (Tc)

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  • Q: SIS443DN-T1-GE3 Warranty?
  • A: We Provide 90 days warranty for our product.
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  • A: Yes, Our product technical engineer will help you with the SIS443DN-T1-GE3 pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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