STY145N65M5 ST TO-247 Transistors

ST
  • STY145N65M5

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  • Part Number
  • STY145N65M5
  • Brand
  • ST
  • Product Categories
  • FETs - Single
  • Package
  • TO-247
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The STY145N65M5 from ST manufacturer is a FETs - Single with Trans MOSFET N-CH 650V 138A . The STY145N65M5 is N-Channel 650V 138A (Tc) 625W (Tc) Through Hole MAX247? Trans MOSFET N-CH Si 650V 138A 3-Pin(3+Tab) Max247 Tube MOSFET N-Ch 650 V 0.012 Ohm 138 A MDmesh M5. More details for STY145N65M5 can be seen below.

Details

N-Channel 650V 138A (Tc) 625W (Tc) Through Hole MAX247?
Trans MOSFET N-CH Si 650V 138A 3-Pin(3+Tab) Max247 Tube
MOSFET N-Ch 650 V 0.012 Ohm 138 A MDmesh M5
Categories
Transistors
Manufacturer
STMicroelectronics
Veswin Part Number
V1070-STY145N65M5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On Jun 07 - Jun 12 (Choose Expedited Shipping)
EDA / CAD Models
STY145N65M5 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
5V @ 250μA
Vgs th Gate Source Threshold Voltage
4 V
Vgs Gate Source Voltage
25 V
Vds Drain Source Breakdown Voltage
650 V
Unit Weight
1.340411 oz
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Supplier Device Package
MAX247?
Series
MDmesh? V
Rise Time
11 ns
Rds On Max Id Vgs
15 mOhm @ 69A, 10V
Rds On Drain Source Resistance
15 mOhms
Qg Gate Charge
414 nC
Power Max
625W
Pd Power Dissipation
625 W
Packaging
Tube
Package Case
TO-247-3
Operating Temperature
150°C (TJ)
Number of Channels
1 Channel
Mounting Style
Through Hole
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
18500pF @ 100V
Id Continuous Drain Current
138 A
Gate Charge Qg Vgs
414nC @ 10V
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Fall Time
82 ns
Drain to Source Voltage Vdss
650V
Current Continuous Drain Id 25°C
138A (Tc)
Configuration
Single

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ST Original Stock

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