TPS1100DR TI SOP-8 MOS Field Effect Transistors

TI
  • TPS1100DR

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  • Part Number
  • TPS1100DR
  • Brand
  • TI
  • Product Categories
  • FETs - Single
  • Package
  • SOP-8
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The TPS1100DR from TI manufacturer is a FETs - Single with SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS. The TPS1100DR is P-Channel 15V 1.6A (Ta) 791mW (Ta) Surface Mount 8-SOIC MOSFET Single P-Ch Enh-Mode MOSFET. More details for TPS1100DR can be seen below.

Details

P-Channel 15V 1.6A (Ta) 791mW (Ta) Surface Mount 8-SOIC
MOSFET Single P-Ch Enh-Mode MOSFET
Categories
MOS Field Effect Transistors
Manufacturer
Texas Instruments
Veswin Part Number
V107110-TPS1100DR
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On Jul 04 - Jul 09 (Choose Expedited Shipping)
EDA / CAD Models
TPS1100DR by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs Gate Source Voltage
- 15 V 2 V
Vds Drain Source Breakdown Voltage
15 V
Unit Weight
0.002677 oz
Typical Turn On Delay Time
4.5 ns
Typical Turn Off Delay Time
13 ns
Transistor Type
1 P-Channel
Transistor Polarity
P-Channel
Technology
Si
Series
TPS1100
Rise Time
10 ns
Rds On Drain Source Resistance
400 mOhms at 4.5 V
Pd Power Dissipation
791 mW
Packaging
Reel
Package Case
SOIC-8
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 125 C
Id Continuous Drain Current
1.6 A
Fall Time
10 ns
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement

TI Inventory

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TI Original Stock

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  • Q: TPS1100DR Warranty?
  • A: We Provide 90 days warranty for our product.
  • Q: TPS1100DR Technical Support?
  • A: Yes, Our product technical engineer will help you with the TPS1100DR pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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